Anomalously high levels of ion-implanted B diffusivity (table 19) during pulse annealing were attributed to the participation of interstitial Si atoms in the redistribution of migrating B atoms between interstitial and vacancy diffusion mechanisms. At B+ doses of more than 1015/cm2, the high values of B diffusivity were caused by the effect of incompatibility elastic stresses (table 20) that prevented the transition of dopant atoms into lattice sites.

V.F.Stelmakh, J.R.Suprun-Belevich, A.R.Chelyadinski: Physica Status Solidi A, 1989, 112[1], 381-4

 

 

 

Table 19

Ambient Diffusion of B as a Function of B Dose, Si Dose, and Defect Concentration

 

B (/cm2)

Si (/cm2)

C (/cm3)

D (cm2/s)

6 x 1013

0

5 x 1018

4 x 10-13

6 x 1013

6 x 1013

1.8 x 1020

1 x 10-12

6 x 1013

1 x 1014

2.3 x 1020

4 x 10-12

6 x 1013

6 x 1014

-

4 x 10-12

6 x 1014

0

5 x 1019

2 x 10-12

6 x 1014

6 x 1014

-

3.5 x 10-12

3.7 x 1015

0

1 x 1020

4 x 10-12

3.7 x 1015

6 x 1013

2.5 x 1020

4 x 10-12

3.7 x 1015

1 x 1014

-

4 x 10-12

3.7 x 1015

6 x 1014

-

4 x 10-12

 

 

 

Table 20

Ambient Diffusion of B as a Function of B Dose, Ge Dose, and Incompatibility Stress

 

B (/cm2)

Ge (/cm2)

S (N/m2)

D (cm2/s)

6 x 1014

0

4 x 107

2.5 x 10-13

6 x 1014

5 x 1015

-

8 x 10-14

6 x 1014

1 x 1016

-

5 x 10-14

1.3 x 1015

0

9 x 107

4 x 10-13

1.3 x 1015

5 x 1015

6 x 107

2.5 x 10-13

1.3 x 1015

1 x 1016

5 x 107

1.3 x 10-13

2 x 1015

0

1.5 x 108

5 x 10-13

2 x 1015

5 x 1015

-

4 x 10-13

2 x 1015

1 x 1016

1 x 107

2.5 x 10-13