An investigation was made of the effect of co-doping, with Si and Mg, upon the yellow luminescence. All of the co-doped epilayers were of n-type, with electron concentrations ranging from 2 x 1018 to 5 x 1019/cm3. On the basis of the photoluminescence spectra, it was judged that the ratio of the integrated intensity of the yellow luminescence to the band-edge emission of co-doped samples was lower than that for samples which were doped with Si donors alone; regardless of the electron concentration or measuring temperature. It was suggested that the Ga vacancy, VGa, was responsible for the yellow luminescence.

Characteristics of Si-Doped GaN Compensated with Mg. J.Y.Leem, C.R.Lee, J.I.Lee, S.K.Noh, Y.S.Kwon, Y.H.Ryu, S.J.Son: Journal of Crystal Growth, 1993, 193[4], 491-5