The depth profiles of B in heterojunctions of amorphous hydrogenated Si and SiC were measured by means of nuclear reaction analysis. It was found that the B concentration in the Si layer depended markedly upon the substrate temperature. It was concluded that the diffusivity (table 21) of B during hydrogenated amorphous Si film growth was very high.

F.Zhang, D.He, Z.Song, G.Chen: Physica Status Solidi A, 1990, 118[1], K17-20

Table 21

Diffusivity of B in Si/SiC Heterojunctions