The migration of implanted B was investigated at temperatures of between 800 and 1000C (table 22) by using furnace and rapid thermal annealing. The transient enhanced diffusion which was caused by implantation damage in the early phases of annealing was analyzed, and it was found that the data could be described by:

D(cm2/s) = 0.022 exp[-2.5(eV)/kT]

S.Solmi, F.Baruffaldi, R.Canteri: Journal of Applied Physics, 1991, 69[4], 2135-42

Table 22

Diffusivity of B in Si