The migration of B was studied in material which had been pre-damaged with Si+ doses of up to the threshold value for amorphization. In the case of material which had been pre-implanted under amorphization conditions (40keV Si+, 5 x 1014/cm2), a B profile kink appeared to arise from retarded diffusion after annealing at 800C. In samples which had been implanted to 3 x 1014/cm2, an enhanced diffusion tail appeared in addition to the kink. The tail was associated with a diffusivity of 10-14cm2/s. Amorphous islands which were about 10nm in diameter were observed in samples which had been pre-damaged with 40keV Si+ to a dose of 3.3 x 1014/cm2. It was suggested that the kink and tail originated in the vacancy and interstitial-rich regions, respectively.

M.Kase, Y.Kikuchi, M.Kimura, H.Mori, T.Ogawa: Applied Physics Letters, 1991, 59[11], 1335-7