Laser pulses were directed at n- epitaxial layers (0.006mm thick) on a substrate of p+ B-doped Si. It was found that local melting and re-freezing of the layer, and of a small volume of the substrate, occurred. In the melt, the occurrence of B diffusion from the substrate gave an almost uniform dopant concentration of 5 x 1018/cm3. On the basis of the results, a limited number of data (1.0 x 10-10 at 1420C and 1.1 x 10-15 at 900C) were deduced for B diffusion in the solid.

K.M.Kim, S.N.Mei, M.J.Saccamango, S.F.Chu, R.J.Von Gutfeld, D.R.Vigliotti: Applied Physics Letters, 1992, 61[9], 1066-8