The use of TiSi2 as a dopant diffusion source for B was studied. The TiSi2 layers were doped via ion implantation. Diffusion was carried out by using furnace and rapid thermal processing. Secondary ion mass spectrometry, scanning electron microscopy, and X-ray diffraction furnished clear evidence for compound formation between Ti and the two dopant species. This led to low dopant concentrations at the silicide/Si interface and to a very poor efficiency of the diffusion source.

V.Probst, H.Schaber, P.Lippens, L.Van den Hove, R.De Keersmaecker: Applied Physics Letters, 1988, 52[21], 1803-5