Migration in amorphous and polycrystalline Si-on-monocrystal systems during rapid thermal annealing and furnace annealing was studied. It was found that changes in microstructure during annealing played a major role in determining diffusion profiles in the substrate, as well as in the polycrystalline Si layer. In the case of B doping, there was little difference between the final microstructures and junction depths for as-deposited amorphous and as-deposited polycrystalline Si. At high annealing temperatures, the native interfacial oxide disintegrated, caused epitaxial realignment of the polycrystalline Si film, and led to enhanced diffusion in the substrate.

K.Park, S.Batra, S.Banerjee, G.Lux, T.C.Smith: Journal of Applied Physics, 1991, 70[3], 1397-404