An experimental and theoretical study was made of the physical mechanisms which were involved in the co-diffusion of As and B in polycrystalline/monocrystalline bilayers during the formation of shallow N+ emitter. The redistribution, of successively implanted As and B, which was induced by rapid thermal annealing was studied by means of secondary ion mass spectroscopic measurements. A strong retardation of diffusion was observed for B, and this was attributed essentially to grain growth in the polycrystalline layer.

C.Gontrand, A.Merabet, B.Semmache, S.Krieger-Kaddour, C.Bergaud, M.Lemiti, D.Barbier, A.Laugier: Semiconductor Science and Technology, 1993, 8[2], 155-62