A modified neutron activation technique was described which was able to measure the profiles of isotopic impurities with a short half-life. A deep acceptor impurity profile was obtained by applying the method to Si diffused with B. It was found that concentrations as low as 1013/cm3 could be measured with an accuracy of 10%.

R.M.Huang, R.S.Huang: Journal of the Electrochemical Society, 1986, 133[12], 2605-8