Secondary ion mass spectrometry depth profiles were used to compare B diffusion from various sources at temperatures ranging from 850 to 1050C. The sources included  in situ  doped and ion-implanted polycrystalline Si and a vapor source involving doped powder. The surface concentrations exhibited little source dependence. A Boltzmann-Matano analysis was used to show that the concentration dependence of the diffusivity upon the source was very small. It was demonstrated that conventional models for B diffusion could not explain the experimental data or the Boltzmann-Matano results; regardless of the source. A new model described the B diffusion profiles more accurately.

W.A.Orr Arienzo, R.Glang, R.F.Lever, R.K.Lewis, F.F.Morehead: Journal of Applied Physics, 1988, 63[1], 116-20