A comparison was made of the B profiles which were determined by using spreading resistance and secondary ion mass spectrometry techniques. It was established that the spreading resistance method could be used for the semi-quantitative measurement of concentrations under transistor preparation conditions. It was concluded that secondary ion mass spectrometry gave better reproducibility than did the spreading resistance technique. That is, the spreading resistance method was not an absolute one, whereas the secondary ion mass spectrometry method was reproducible over differing instruments and periods of at least 10 years. On the other hand, the spreading resistance method was sensitive right up to junctions whereas the secondary ion mass spectrometry technique was not.

R.A.Clapper, D.G.Schimmel, J.C.C.Tsai, F.S.Jabara, F.A.Stevie, P.M.Kahora: Journal of the Electrochemical Society, 1990, 137[6], 1877-83