The behavior of B and F which was introduced into an oxide/Si system was investigated. It was found that the introduction of F increased the sheet resistance of B layers in Si after heat-treatment in both N and O atmospheres. The B depth profiles revealed that F caused B to migrate into the oxide from the Si. This behavior was explained by assuming that F, incorporated into the oxide network together with B, lowered the viscosity of the oxide.

Y.Sato, I.Kawashima: Journal of the Electrochemical Society, 1994, 141[5], 1381-6