A study was made of the oxidation-retarded diffusion of B into bare samples during O2/NF3 oxidation at 1100C for times of up to 36h. The results confirmed the large effect which small (ppm) additions of F had upon the point defect equilibrium at the growing Si/SiO2 interface. They also supported conclusions which were drawn from previous studies of the shrinkage of oxidation-induced stacking faults during the same oxidation process.

U.S.Kim, T.Kook, R.J.Jaccodine: Journal of the Electrochemical Society, 1988, 135[1], 270-1