The dependence of anomalous B diffusion upon the defect depth position was studied after furnace and electron beam annealing of samples which had been damaged by 28Si ions implanted at various energies. This behavior was correlated with the excess vacancies and interstitials which were produced by bombardment of the surface region and the bulk, respectively. The spatial separation of these point defects was indicated by analyses of intensity profiles obtained by using double-crystal X-ray diffraction.

S.Solmi, R.Angelucci, F.Cembali, M.Servidori, M.Anderle: Applied Physics Letters, 1987, 51[5], 331-3