The behavior of B which had been implanted into pre-amorphized material was studied by using secondary ion mass spectroscopy and transmission electron microscopy. A pre-amorphized surface layer was created by double Si ion implantation, and the as-implanted B profiles were entirely confined to the pre-amorphized layer. The results showed that B diffusion during rapid thermal annealing was anomalous in nature, and that the magnitude of the anomalous diffusion depended upon the rapid thermal annealing temperature. Whereas rapid thermal annealing at 1150C led to enhanced B diffusion, as compared to that in monocrystalline samples, reduced diffusion was observed in pre-amorphized samples which were annealed at 1000C. The results were explained in terms of differences in defect evolution during rapid thermal annealing.

Y.M.Kim, G.Q.Lo, D.L.Kwong, H.H.Tseng, R.Hance: Applied Physics Letters, 1989, 55[22], 2316-8