A B-doped surface layer, with a thickness of 0.0003mm, was irradiated with 40keV N+ ions, 135keV Ar+ ions, 135keV Ar+ ions, or 135keV Xe+ ions, at temperatures of between 600 and 1100C. The B and carrier profiles exhibited radiation-enhanced dopant redistributions. The diffusion enhancement was more effective for lighter ions and for higher irradiation temperatures. This behavior was attributed to a lower probability for the trapping of mobile point defects at extended stable lattice defects. A comparison of the carrier and dopant profiles revealed the formation of immobile electrically inactive B species by interaction with lattice defects at temperatures which were not too high. A characteristic double-peak structure was observed at higher irradiation temperatures. This was explained by the diffusion of B in the form of unstable B-defect pairs. The B which corresponded to these peaks was located at normal lattice sites and was electrically active.

G.A.Kachurin, I.E.Tyshchenko, E.Wieser, C.Weise: Physica Status Solidi A, 1989, 109[1], 141-8