The annealing of B through-oxide implanted material can lead to incubated O precipitation-enhanced B diffusion. It was shown here that annealing of through-oxide implants in an NF3-containing N2 ambient effectively reduced incubated enhanced diffusion. The effect of F was also illustrated, for B plus F through-oxide implants with pure N2 annealing. By comparing B diffusion between B-plus-F and B-plus-Ne implants, it was deduced that F did not have a chemical effect upon the capture of point defects which caused enhanced diffusion. Instead, F was thought to be incorporated into O precipitates. This then affected point defect generation.

D.Fan, J.M.Parks, R.J.Jaccodine: Applied Physics Letters, 1991, 59[10], 1212-4