By using the B decoration method, an investigation was made of the structure of a vacancy-dislocation cluster in the disturbed layer of monocrystals. The B diffusion coefficient was determined for various parts of a vacancy-dislocation cluster which was formed from excess vacancies. The experimental results demonstrated that vacancies were distributed in such clusters according to a Gaussian law. A non-linear diffusion mechanism was suggested to apply at low dopant concentrations.

A.E.Alekseev, O.I.Gerasimov, A.P.Fedchuk: Fizika Tverdogo Tela, 1991, 33[7], 2153-8 (Soviet Physics - Solid State, 1991, 33[7], 1212-5)