Ions of B were implanted at a wafer temperature of 950C. It was found that the resultant B profile revealed the occurrence of marked up-hill diffusion at the surface, plus a very high degree of diffusion enhancement. The results confirmed the effect of point defect gradients upon dopant migration. It was found that the experimental results agreed well with the predictions of pair diffusion theories.

P.Pichler, R.Schork, T.Klauser, H.Ryssel: Applied Physics Letters, 1992, 60[8], 953-5