A study was made of a low-temperature long-range interstitial B migration behavior which was initiated by kick-out reactions with self-interstitials that had been created by Si implantation. At 450C, migration path lengths of about 100nm were measured within a time frame of 0.25h. Observations of the numbers and spatial distribution of displaced B atoms, with regard to self-interstitial and vacancy distributions which had been deduced from ion transport theory, permitted the reaction kinetics to be estimated. The reactions:

self-interstitial + Bs → Bi

vacancy + Bi → Bs

self-interstitial + vacancy → 0

were essentially diffusion-limited and were associated with capture radii which were of atomic dimensions.

N.E.B.Cowern, G.F.A.Van de Walle, P.C.Zalm, D.J.Oostra: Physical Review Letters, 1992, 69[1], 116-9