Differences in B diffusivity were used to characterize epitaxially grown layers. After an oxidation-enhanced diffusion of B spikes, a decrease in B diffusivity with increasing depth was observed in epitaxial Si layers which had been grown by means of molecular beam epitaxial deposition and fast gas switching vapor deposition. This differed from the behavior which was observed in layers that had been grown by means of low-temperature chemical vapor deposition. The reduced B diffusivity was suggested to be caused by a supersaturation of vacancy defects, which acted as interstitial traps and suppressed the diffusion of B.

K.J.Van Oostrum, P.C.Zalm, W.B.De Boer, D.J.Gravesteijn, J.W.F.Maes: Applied Physics Letters, 1992, 61[13], 1513-5