An effective interstitial surface recombination velocity for the buried Si/SiO2 interface in SIMOX material was used to model accurately the oxidation-enhanced diffusion of B in singly- and multiply-implanted material. The effective recombination velocity at the SIMOX interface was found to be higher than the value for a thermally grown SiO2 interface. The enhancement of the effective recombination velocity depended upon the material formation conditions and was empirically related to the near-interface dislocation density. An increased surface interfacial area was considered to be the most likely cause of the increased effective recombination velocity.

S.W.Crowder, P.B.Griffin, C.J.Hsieh, G.Y.Wei, J.D.Plummer, L.P.Allen: Applied Physics Letters, 1994, 64[24], 3264-6