It was noted that the transient diffusion of ion-implanted B was inhibited by the presence of high C or B concentrations. This was due to the formation of interstitial clusters that were stabilized by impurity atoms. A comparison of experimental data and simulation results suggested that the number of self-interstitials that was trapped per clustered impurity atom was equal to about 1.15 for C and to about 1 for B. These values were consistent with the operation of a volume compensation mechanism.

N.E.B.Cowern, A.Cacciato, J.S.Custer, F.W.Saris, W.Vandervorst: Applied Physics Letters, 1996, 68[8], 1150-2