Phenomena which were associated with the transient diffusion of implanted B were reviewed. It was recalled that the Si self-interstitial flux, which caused B interstitialcy diffusion, had been directly observed by using B diffusion marker layers that had been fabricated by means of low-temperature crystal growth. Low-energy and low-dose Si implantation into surface layers permitted the experimental separation of the source and the flux of interstitials. The clustering of B was directly correlated with the supersaturation of injected Si interstitials. The diffusivity of the Si interstitial was dominated by the presence of trapping sites. Implantation produced rod-like defects which consisted of interstitial precipitates, on {311} planes, that were in the form of a single monolayer of hexagonal Si. The numbers of Si interstitials which evaporated from the {311} defect were sufficient to explain all of the transient diffusion.

P.A.Stolk, H.J.Gossmann, D.J.Eaglesham, J.M.Poate: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 187-95