Ions of As and B were implanted using energies which had been chosen so that their projected ranges coincided, and the implanted material was annealed in Ar gas (950C, 0.5 to 5h). The diffusivity of B atoms decreased with an increase in annealing time.

K.Yokota, Y.Okamoto, F.Miyashita, T.Hirao, M.Watanabe, K.Sekine, Y.Ando, K.Matsuda: Journal of Applied Physics, 1994, 75[11], 7247-51