The enhanced diffusion tail of implanted B was studied using conventional furnace annealing. Surface layer stripping was used to remove part of the sample before annealing in order to distinguish the effect of the defect-rich surface region from the tail region. The B concentration profiles were obtained by using secondary ion mass spectrometry, and spreading resistance profiles were determined for comparison. The results showed that implantation-induced damage in the surface region was responsible for enhanced B diffusion. Channelled B in the tail of the implantation profile was activated during annealing and had little effect upon the tail redistribution during annealing.

D.Fan, J.Huang, R.J.Jaccodine, P.Kahora, F.Stevie: Applied Physics Letters, 1987, 50[24], 1745-7