The effect of Si ion implantation upon the anomalous transient diffusion of ion-implanted B was investigated. It was found that Si ion fluences which were well below that which was required to amorphize the lattice substantially reduced the anomalous transient diffusion of subsequently implanted B. However, the sheet resistance was increased by additional Si implantation. The implantation of Si ions into activated B layers caused additional anomalous diffusion at distances which were substantially beyond the range of the Si ions. Anomalous motion was also reduced in regions where the damage was greater. These effects could be explained in terms of the generation of point defect clusters which dissolved during annealing, and the annihilation of point defects in regions of high damage by the formation of interstitial-type extended defects.

A.E.Michel, W.Rausch, P.A.Ronsheim: Applied Physics Letters, 1987, 51[7], 487-9