The effect of the rate of defect generation upon the radiation-enhanced diffusion of pre-implanted B atoms, due to post-bombardment at 750C, was investigated by using secondary ion mass spectrometry depth profiling. The generation rate was varied by changing the beam current density and the ion species. It was found that the excess B diffusivity increased in proportion to the generation rate for light ion irradiation. However, for production rates greater than about 0.2dpa/s, it again decreased. The rate effects were explained in terms of a dynamic overlapping model.

K.Holldack, H.Kerkow, M.Gericke: Physica Status Solidi A, 1987, 102[2], 633-8