A comparison was made of 2 shallow pre-amorphization techniques which involved Si+ and Ge+ implantation followed by B+ implantation and rapid thermal annealing. The resultant effect upon B diffusion profiles and extended defects was studied by using secondary ion mass spectroscopy and cross-sectional transmission electron microscopy. Enhanced or retarded B diffusion during rapid thermal annealing was related to the relative depths of the original amorphous/crystalline interface and the as-implanted B profiles, to the type of ion used for pre-amorphization, and to the initial type and relative location of radiation-induced point defects. In general, Si+ self-implanted samples exhibited less B profile broadening than did Ge+ implanted samples after rapid thermal annealing (1050C, 10s). The conditions which were necessary for the complete annihilation of end-of-range interstitial loops after Si+ self-amorphization were identified.

A.C.Ajmera, G.A.Rozgonyi, R.B.Fair: Applied Physics Letters, 1988, 52[10], 813-5