The transient-enhanced diffusion of B was studied by comparing through-oxide and direct B implants. Some of the directly implanted wafers were differentially anodized and etched to depths which were equal to the thickness of the thermal oxide. The spreading resistance profiles which were measured after annealing revealed that transient-enhanced B diffusion could be prevented by implantation through the oxide. The results indicated that the presence of recoiled O in through-oxide implanted material could be important in reducing dopant-enhanced diffusion.

D.Fan, R.J.Jaccodine: Applied Physics Letters, 1989, 54[7], 603-5