Float-zone [100]-type wafers were implanted with 15 to 50MeV B ions to doses of between 1013 and 1015/cm2. The implanted samples were furnace-annealed at temperatures of between 800 and 1250C, and were analyzed by using spreading resistance profilometry. The range distributions for various implant energies were compared with predictions which were based upon Bethe electronic energy loss, electronic straggling, and large-angle Rutherford back-scattering. Good agreement was found with regard to the projected range and straggling behavior. However, some discrepancies were evident in the tails of the dopant distributions. It was found that B diffusion during oxidation was enhanced by about 60%. This suggested that interstitials migrated over distances of at least 0.1mm at these temperatures.

A.La Ferla, A.Di Franco, E.Rimini, G.Ciavola, G.Ferla: Materials Science and Engineering B, 1989, 2, 69-73