The anomalous diffusion of implanted B, in material which had been damaged by self-implantation, was investigated by means of cross-sectional transmission electron microscopy and secondary ion mass spectroscopy. During rapid thermal annealing, bulges in the B profile were observed at the edges of the defect band, and profile broadening was accompanied by shrinking of the band. The decay time essentially vanished due to the emission of point defects from the edges of the defect band. It was suggested that the anomalous B diffusion was related to the point defects which were produced by implantation and which were emitted from the defect band.

Q.Guo, X.Bao, J.Hong, Y.Yan, D.Feng: Applied Physics Letters, 1989, 54[15], 1433-5