The effects of extended defect evolution upon the anomalous diffusion of ion-implanted B during rapid thermal annealing were studied by means of transmission electron microscopy and secondary-ion mass spectroscopy. It was found that, for low-dose B implants (less than 1014/cm2), no extended defects were observable after rapid thermal annealing at 1000C, and the anomalous diffusion saturated within less than 10s. However, extended defects developed after making high-dose B implants (greater than 5 x 1014 /cm2). In this case, the anomalous diffusion persisted for a much longer time and was dose-dependent. The evolution of extended defects was linked to the anomalous B diffusion behavior.

Y.M.Kim, G.Q.Lo, D.L.Kwong, A.F.Tasch, S.Novak: Applied Physics Letters, 1990, 56[13], 1254-6