The effect of implantation damage upon anomalous diffusion was studied by varying the relative positions of the B profile and of the damage distribution which was produced by Si pre-implantation using various energies. It was shown that the anomalous diffusion of implanted B was caused by the implantation damage rather than by the fast-diffusing interstitial B. During annealing, the extended defects which acted as sinks for point defects retarded anomalous diffusion in, and near to, the defect band. However, during prolonged annealing they began to dissolve and to emit point defects which then caused the anomalous diffusion.

X.M.Bao, Q.Guo, M.S.Hu, D.Feng: Journal of Applied Physics, 1989, 66[3], 1475-7