The effects of implantation damage upon B diffusion were analyzed by using 29Si implants at doses ranging from 1012 to 1014/cm2. These created controlled amounts of damage. Temperatures ranging from 800 to 1000C were used to anneal the implant damage. For all annealing temperatures, the peak B concentration was well below the intrinsic electron concentration. Significantly enhanced B diffusion was observed, even at doses as low as 1012/cm2. The greatest enhancement of B diffusion was found for the highest dose and lowest annealing temperature. The kinetics of damage annealing governed the transient enhancement of the B profile.

P.A.Packan, J.D.Plummer: Applied Physics Letters, 1990, 56[18], 1787-9