Reductions in the transient diffusion of 10keV B, which had been implanted along [100] to a dose of 1013/cm2, were observed after annealing (900C, 10s) when the samples were irradiated with 1MeV 29Si ions to a dose of 5 x 1013/cm2 or more. It was found that a lower Si dose did not affect the transient B tail-diffusion. Secondary defects formed, near to the peak of the 1MeV Si damage distribution, at doses of 5 x 1013/cm2 and more. These acted as efficient sinks for interstitials from shallower depths, and thereby reduced transient tail diffusion.

V.Raineri, R.J.Schreutelkamp, F.W.Saris, K.T.F.Janssen, R.E.Kaim: Applied Physics Letters, 1991, 58[9], 922-4