The anomalous diffusion of ion-implanted B was suppressed by using laser annealing. In the case of rapid thermal annealing, high-dose B implantation significantly enhanced anomalous B diffusion. This was attributed mainly to an increased density of interstitial clusters. The laser annealing method was superior in that it promoted dopant activation.

M.H.Juang, F.S.Wan, H.W.Liu, K.L.Cheng, H.C.Cheng: Journal of Applied Physics, 1992, 71[7], 3628-30