It was found that high-dose B implantation conditions were important with regard to the reduction of transiently enhanced B diffusion. The use of BF2+ implantation led to excellent dopant activation and to a reduction, in anomalous diffusion, due to the formation of an amorphous layer and to a scarcity of defects below the amorphous/crystalline interface. On the other hand, B+-implanted crystalline samples exhibited a poor activation efficiency and markedly anomalous diffusion at high temperatures. The latter was attributed to the effect of damage which was produced by high-dose implantation. Samples of B+-implanted Si+ pre-amorphized material also exhibited marked transiently enhanced diffusion, in spite of a good dopant activation.

M.H.Juang, F.S.Wan, H.W.Liu, K.L.Cheng, H.C.Cheng: Journal of Applied Physics, 1992, 71[6], 2611-4