Transiently enhanced diffusivity of implanted B. in crystalline material, in Ge pre-amorphized material, and in epitaxially re-grown material, was studied by using secondary ion mass spectrometry. The total Ge dose which was used for amorphization was equal to 1.2 x 1015/cm2. It was found that the transiently enhanced diffusivity in re-grown material was equal to 1/3 of the diffusivity in crystalline material. The enhanced diffusivity in pre-amorphized material was retarded to 70% of the value for crystalline material. It was deduced that a moderate Ge implantation dose was sufficient to reduce the depth of the B dopant profile during high-temperature furnace annealing.

S.Peterström, B.G.Svensson: Journal of Applied Physics, 1992, 71[3], 1215-8