Dislocation-free (100) wafers of n-type material were implanted with 110keV Si ions to a dose of 2 x 1015/cm2. An anomalous diffusional behavior of B was observed, and was attributed to the effect of interstitials which came from the damage tail.

X.M.Bao, X.M.Hua: Physica Status Solidi A, 1991, 123[2], K89-93