The migration of implanted B in pre-amorphized material was monitored by using secondary ion mass spectrometry and cross-sectional transmission electron microscopy. It was found that 90keV Si implants created an amorphous layer that extended from the surface to a depth of 186nm; as measured by means of Rutherford back-scattering spectrometry. The as-implanted B profiles were entirely confined to the amorphous layer. The results indicated that B diffusion in the amorphous layer was suppressed during rapid thermal annealing at temperatures of between 1000 and 1150C.

A.J.Walker: Journal of Applied Physics, 1992, 71[4], 2033-5