An investigation was made of the diffusion of B which had been implanted to high concentrations in pre-amorphized material. Rapid epitaxial re-growth of the amorphous layer brought B atoms into substitutional positions, up to a threshold concentration of about 3.5 x 1020/cm3. This value was almost independent of the annealing temperature and the implanted dose.

S.Solmi, E.Landi, F.Baruffaldi: Journal of Applied Physics, 1990, 68[7], 3250-8