Excellent shallow p+n junctions were formed by implanting BF2+ ions into thin polycrystalline films and then annealing them. It was found that anomalous B diffusion occurred when subsequent silicidation was carried out. Silicidation which was performed by using 30nm of Ti only slightly affected the junction profile. The junction was considerably deepened by 60nm Ti silicidation; yielding a resultant depth of about 0.11. The large B redistribution was attributed to the effect of the point defects which were introduced by silicidation.

M.H.Juang, C.T.Lin, S.T.Jan, H.C.Cheng: Applied Physics Letters, 1993, 63[9], 1267-9