The local atomic environment of Sb dopants, in samples which had been implanted to 2 x 1016 or 5 x 1016/cm2, was studied by using near-grazing incidence fluorescence extended X-ray absorption fine structure techniques at various stages of the Sb deactivation process. Annealing was performed, at temperatures of between 900 and 1000C, for times of 30s to 4h. A comparison of Sb and B co-diffusion data, with corresponding results for the diffusion of Sb alone, revealed several anomalous effects that were due to dopant interaction. A simulation program which took account of dopant precipitation and donor-acceptor pairing permitted the prediction of most of the anomalous phenomena that occurred in high-concentration co-diffusion experiments.

C.Revenant-Brizard, J.R.Regnard, S.Solmi, A.Armigliato, S.Valmorri, C.Cellini, F.Romanato: Journal of Applied Physics, 1996, 79[12], 9037-42