It was shown that ion beam defect engineering could be used for the reduction of secondary defects that were created by dopant ion implantation, for the gettering of F atoms from B-doped regions in BF2-implanted Si, and for reducing B diffusion in BF2-implanted Si.

W.Zhonglie, Z.Qingtai, W.Keming, S.Borong: Nuclear Instruments and Methods in Physics Research B, 1996, 115[1-4], 421-9