Samples of  in situ  doped Si were subjected to inert-gas furnace annealing at 800C. The effect of biaxial tension was investigated by using relaxed SiGe layers as substrate templates for epitaxial Si layers. The B diffusivity did not depend strongly upon the biaxial strain.

P.Kuo, J.L.Hoyt, J.F.Gibbons, J.E.Turner, D.Lefforge: Applied Physics Letters, 1995, 66[5], 580-2