The transient enhanced diffusion of shallow molecular beam epitaxially grown marker layers of B, resulting from deep MeV Si+ ion implantation to doses of about 1016/cm2, was measured. It was expected that the near-surface regions of these implanted samples would be vacancy-rich. The shallow B marker layers exhibited transient enhanced diffusion. This implied that an interstitial supersaturation was present.

D.J.Eaglesham, T.E.Haynes, H.J.Gossmann, D.C.Jacobson, P.A.Stolk, J.M.Poate: Applied Physics Letters, 1997, 70[24], 3281-3