The anomalous diffusion of ion-implanted B was shown to be a transient effect with a decay time which decreased rapidly with increasing annealing temperature. The decay time was approximately 0.75h at 800C and decreased to the order of seconds at 1000C. The anomalous displacement in the low concentration region was greater at low temperatures but a larger fraction of the B was redistributed at high temperatures. Sheet resistance measurements agreed with the idea that the moving fraction of B atoms was electrically active and limited to the intrinsic carrier concentration at the annealing temperature. The activation energy for the decay of the transient was greater than that for the diffusion coefficient.

A.E.Michel, W.Rausch, P.A.Ronsheim, R.H.Kastl: Applied Physics Letters, 1987, 50[7], 416-8