A model, for B diffusion in poly-Si structures, was presented. This took account of grain boundary movement, impurity segregation to grain boundaries, differing diffusivities in the grain and in the grain boundary, the effect of interface-oxide thickness, and high-concentration effects upon the B profile. It was found that the model gave good agreement with experiment. A drawback was a general ignorance of data on temporal and spatial variations in grain size.

A.D.Sadovnikov: Solid-State Electronics, 1991, 34[9], 969-75